Featured Symposium

Impact of Oxidation Layer in the Resistive Switching Behavior of Nitride-based Memristor Devices

Presenting Author(s)

• DZ

  Di Zhang, Ph.D.

  Los Alamos National Laboratory
  Los Alamos, New Mexico, United States

Co-Author(s)

• RD

  Rohan Dhall, Ph.D.

  Senior Scientific Engineering Associate
  Lawrence Berkerley National Laboratory, United States
• CS

  Chengyu Song

  Lawrence Berkeley National Laboratory, United States
• MS

  Matthew Schneider

  Materials Science & Technology Division, Los Alamos National Laboratory
  Los Alamos, New Mexico, United States
• SH

  Stephen House, Ph.D.

  Staff Scientist
  Sandia National Laboratories
  (1) University of Pittsburgh
  Albuquerque, New Mexico, United States
• SK

  Sundar Kunwar, Ph.D.

  Los Alamos National Laboratory, United States
• HD

  Hongyi Dou, Ph.D.

  Purdue University, United States
• 

  Jim Ciston

  Deputy Director (interim)
  Lawrence Berkeley National Laboratory, California, United States
• HW

  Haiyan Wang

  Purdue University, United States
• AC

  Aiping Chen

  Los Alamos National Laboratory, United States